2003. 6. 23 1/3 semiconductor technical data KTJ6131E revision no : 0 ultra-high speed switching applications analog switch applications features 2.5 gate drive. low threshold voltage : v th =-0.5 -1.5v. high speed. small package. enhancement-mode. maximum rating (ta=25 ) dim millimeters a b d e esm 1.60 0.10 0.85 0.10 0.70 0.10 0.27+0.10/-0.05 1.60 0.10 1.00 0.10 0.50 0.13 0.05 c g h j 1 3 2 e b d a g h c j 1. source 2. gate 3. drain + _ + _ + _ + _ + _ + _ electrical characteristics (ta=25 ) marking e b type name p channel mos field effect transistor d g s this transistor is electrostatic sensitive device. please handle with caution. equivalent circuit characteristic symbol test condition min. typ. max. unit gate leakage current i gss v gs = 16v, v ds =0v - - 1 a drain-source breakdown voltage v (br)dss i d =-100 a, v gs =0v -30 - - v drain cut-off current i dss v ds =-30v, v gs =0v - - -1 a gate threshold voltage v th v ds =-3v, i d =-0.1ma -0.5 - -1.5 v forward transfer admittance |y fs | v ds =-3v, i d =-10ma 15 - - ms drain-source on resistance r ds(on) i d =-10ma, v gs =-2.5v - 20 40 input capacitance c iss v ds =-3v, v gs =0v, f=1mhz - 10.4 - pf reverse transfer capacitance c rss v ds =-3v, v gs =0v, f=1mhz - 2.8 - pf output capacitance c oss v ds =-3v, v gs =0v, f=1mhz - 8.4 - pf switching time turn-on time t on v dd =-3v, i d =-10ma, v gs =0 -2.5v - 0.15 - s turn-off time t off - 0.13 - s characteristic symbol rating unit drain-source voltage v ds -30 v gate-source voltage v gss 20 v dc drain current i d -50 ma drain power dissipation p d 100 mw channel temperature t ch 150 storage temperature range t stg -55 150
2003. 6. 23 2/3 KTJ6131E revision no : 0 drain-source voltage v (v) drain current i (ma) d 0 ds 0 i - v dds drain current i (ma) forward transfer admittance d y - i gate-source voltage v (v) drain current i (ma) d ds (low voltage region) common source ta=25 c v =-1.2v gs fs d fs y (ms) common source v =-3v ds common source v =-3v ds -10 -2 -4 -6 -8 -10 -20 -30 -40 -50 -1.4v -1.6v -1.8v -2.0v -2.2v -2.4v -2.5v i - v ds d drain current i (ma) gate-source votage v (v) gs d i - v dgs ta=25 c capacitance c (pf) drain-source voltage v (v) ds c - v ds 0 0 common source ta=25 c v =-0.9v gs -0.5 -0.1 -0.2 -0.3 -0.4 -0.2 -0.4 -0.6 -0.8 -1.0 -1.0v -1.05v -1.1v -1.15v -1.2v -1.3v -2.5v v =0 f=1mhz ta=25 c gs common source c iss c oss rss c -0.01 0 -1 -2 -3 -4 -5 -0.1 -1 -10 -50 -0.03 -0.3 -3 -30 -0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -0.1 -1 -10 -50 -0.03 -0.3 -3 -30 -0.1 -0.3 -0.5 -1 -3 -5 -10 -20 0.5 1 3 5 10 30 50 -1 -3 -5 -10 -30 -50 -100 5 10 30 50 100 dr drain reverse current i (ma) drain-source votage v (v) ds ds dr i - v common source v =0 gs ta=100 c i s d g dr ta=-25 c ta=25 c
2003. 6. 23 3/3 KTJ6131E revision no : 0 p - ta d ambient temperature ta ( c) 02040 50 d 0 drain power dissipation p (mw) 60 80 100 120 140 160 100 150 200 250 300 350 ta=25 c out (z =50 ? ) r v :t , t < 5ns d.u. 1% v =-3v common source 10 s -2.5v 0 dd l v 50 ? in v r v out in dd = < f v in -2.5v 90% dd v 0 out v in v 10% 10% 90% ds v (on) on t off t f t r t switching time test circuit v - i d drain current i (ma) -1 -3 -10 -100 drain-source on voltage ds(on) d -30 -5 common source ta=25 c gs v =-2.5v -1k -500 -100 -50 -30 -10 -3k -300 -50 ds(on) v (mv) switching time t (ns) -3 -1 -0.3 drain current i (ma) d d t - i -10 -30 -50 common source v =-3v dd 10 1k 30 50 100 300 500 d.u. 1% < = v :t , t < 5ns in rf (z =50 ? ) out ta=25 c v -2.5v 0 10 s v r out v in l 50 ? dd t on r t off t f t
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